Help guide/tutorial overclock tridentZ 3200 on Maximus XI Extreme

[Silverbullit]

Howdy mates,

Can anyone help me with a guide/tutorial on overclocking TridentZ 3200 CL14 (B1 B-die) on my Maximus XI Extreme?
(I cannot find a clear tutorial)

I would like to see the settings made on pictures, preferable youtube tutorial. But I cannot find anything that is clear and specifik to the above mobo/dram combo...

I would appreciate any help!

Also VCCIO, looks a bit high to me, what is to high?

[Falkentyne]

Howdy mates,

Can anyone help me with a guide/tutorial on overclocking TridentZ 3200 CL14 (B1 die) on my Maximus XI Extreme?
(I cannot find a clear tutorial)

I would like to see the settings made on pictures, preferable youtube tutorial. But I cannot find anything that is clear and specifik to the above mobo/dram combo...

I would appreciate any help!

Also VCCIO, looks a bit high to me, what is to high?

B1? You mean B-die? or dual rank with B1 version PCB?
If that's B-die, you should have no problem using command rate 1T, tightening tRFC (down to 270) and tREFI (up to 65534). There are other subtimings and you should visit the overclock.net DDR4 stability thread and read some of the posts about them. There's also

https://github.com/integralfx/MemTes...0OC%20Guide.md

3333 mhz should also work at those same timings. Anything else--well..you're on your own.

[Silverbullit]

Thanks for your input Falkentyne!
Yes sorry, tired... B-die.

I would love to find a deeper tutorial/information of suitable settings for my kit such as they shared in this thread;
In this post they have screendumps of the settings for another set of TridentZ (That does not work on my set)
https://rog.asus.com/forum/showthrea...clock+tridentz

Do I simply set XMP I and fiddle with all the bazillion latency settings?

I have this set;
F4-3200C14D-32GTZR
I guess the nomenclature something like;
4 = DDR4
3200 = 3200MHz
C14 = CAS Latency 14
D = Dual Channel Kit/2 Sticks
32 = 32 GB Kit
G = ?
TZR = Trident Z RGB

Have not done the Marsienne Prime95 yet but they do boot at 3400.

My motherboard; Maximus XI Extreme bios: 1502

I probably shouldnt mix questions but...
Also I have some speed throttling issue with my 9900K, HWINFO64 tells that my OC right now is Curreent 3,300MHz / Minimum 2669,4MHz / Maximum 5003,6MHz / Average 4614MHz.
Any hints what I might have missed for this problem?

[Silverbullit]

B1? You mean B-die? or dual rank with B1 version PCB?
If that's B-die, you should have no problem using command rate 1T, tightening tRFC (down to 270) and tREFI (up to 65534). There are other subtimings and you should visit the overclock.net DDR4 stability thread and read some of the posts about them. There's also

https://github.com/integralfx/MemTes...0OC%20Guide.md

3333 mhz should also work at those same timings. Anything else--well..you're on your own.

Thanks Falkentyne, really thanks a million!
In answer to your questions;
B-die/Dual rank/B1PCB highlighted below in the Thaiphoon report. (C below)

1,36v 1T/1N cl14
3333 is so-so, it worked until the heatwave however pc now freezes. (Pun intended)
3200 seems o.k.

About my homework I have some Questions that I would like to take the opportunity to ask someone smart (unlike me
May be a stupid question but... it mentions that B-die scales proportionally to increased voltage.
Q; Does this imply that I could simply crank up the vdimm voltage to 1,45V (safe-ish) and without fiddling with timings simply crank it up and see what frequency I hit ? (If I read correctly somwhere in the hood around 3733ish)
My Max XI Extreme seems to like high VCCSA/VCCIO but if I try manually setting these to somewhere around 1.20 - 1.25


Thaiphoon report on my memkit;
Manufacturing Description Module Manufacturer: G.Skill
Module Part Number: F4-3200C14-16GTZR
Module Series: Trident Z RGB
DRAM Manufacturer: Samsung
DRAM Components: K4A8G085WB-BCPB
DRAM Die Revision / Process Node: B / 20 nm
Module Manufacturing Date: Undefined
Module Manufacturing Location: Taipei, Taiwan
Module Serial Number: 00000000h
Module PCB Revision: 00h
Physical & Logical Attributes Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2133
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 16 GB
Reference Raw Card: B1 (8 layers)
JEDEC Raw Card Designer: Micron Technology
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 2
Address Mapping from Edge Connector to DRAM: Mirrored
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 16
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Supported
Soft Post Package Repair: Not supported
DRAM Timing Parameters Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 10T, 11T, 12T, 13T,
14T, 15T, 16T
Minimum Clock Cycle Time (tCK min): 0,938 ns (1066,10 MHz)
Maximum Clock Cycle Time (tCK max): 1,500 ns (666,67 MHz)
CAS# Latency Time (tAA min): 13,750 ns
RAS# to CAS# Delay Time (tRCD min): 13,750 ns
Row Precharge Delay Time (tRP min): 13,750 ns
Active to Precharge Delay Time (tRAS min): 33,000 ns
Act to Act/Refresh Delay Time (tRC min): 46,750 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,700 ns
Long Row Active to Row Active Delay (tRRD_L min): 5,300 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,625 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Thermal Parameters Module Thermal Sensor: Not Incorporated
Integrated Temperature Sensor Manufacturer: ABLIC Inc.
Model: S-34TS04A
Revision: 21h
Temperature Monitor Status: Active
Current Ambient Temperature: 33,250 °C
Sensor Resolution: 0,2500 °C (10-bit ADC)
Accuracy over the active range (75 °C to 95 °C): ±1 °C
Accuracy over the monitoring range (40 °C to 125 °C): ±2 °C
Open-drain Event Output: Disabled
10V of VHV on A0 pin: Supported
Negative Temperature Measurements: Supported
Interrupt capabilities: Supported
SPD Protocol SPD Revision: 1.0
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 7EAFh (OK)
SPD Checksum (Bytes 80h-FDh): DF74h (OK)
Part number details JEDEC DIMM Label: 16GB 2Rx8 PC4-2133-UB1-10
Frequency CAS RCD RP RAS RC RRDS RRDL CCDL FAW
1067 MHz 16 15 15 36 50 4 6 6 23
1067 MHz 15 15 15 36 50 4 6 6 23
933 MHz 14 13 13 31 44 4 5 6 20
933 MHz 13 13 13 31 44 4 5 6 20
800 MHz 12 11 11 27 38 3 5 5 17
800 MHz 11 11 11 27 38 3 5 5 17
667 MHz 10 10 10 22 32 3 4 4 14
Intel Extreme Memory Profiles Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 2 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR4-3200 N/A
DRAM Clock Frequency: 1600 MHz N/A
Module VDD Voltage Level: 1,35 V N/A
Minimum DRAM Cycle Time (tCK): 0,625 ns N/A
CAS Latencies Supported: 14T N/A
CAS Latency Time (tAA): 8,750 ns N/A
RAS# to CAS# Delay Time (tRCD): 8,750 ns N/A
Row Precharge Delay Time (tRP): 8,750 ns N/A
Active to Precharge Delay Time (tRAS): 21,250 ns N/A
Active to Active/Refresh Delay Time (tRC): 30,000 ns N/A
Four Activate Window Delay Time (tFAW): 24,000 ns N/A
Short Activate to Activate Delay Time (tRRD_S): 3,500 ns N/A
Long Activate to Activate Delay Time (tRRD_L): 5,000 ns N/A
Normal Refresh Recovery Delay Time (tRFC1): 350,000 ns N/A
2x mode Refresh Recovery Delay Time (tRFC2): 260,000 ns N/A
4x mode Refresh Recovery Delay Time (tRFC4): 160,000 ns N/A
Show delays in clock cycles