You can see my specs on my profile to compare yours but I am running 4x16 Corsair Vengeance RGB PRO with a threadripper and at 3600 (not great latency though for some reason). Below is my THAIPHOON output in case that helps also.
Something that is odd about my ram is that other folks THAIPHOON report for the same exact part number but that their DRAM Manufacturer is Samsung B but mine is Micron E (so maybe be sure to check before buying a second set to ensure they are exactly the same).
THAIPHOON OUTPUT
MANUFACTURING DESCRIPTION
Module Manufacturer: Corsair
Module Part Number: CMW64GX4M4K3600C18
Module Series: Vengeance RGB PRO
DRAM Manufacturer: Micron Technology
DRAM Components: D9VPP (MT40A1G8SA-075:E)
Component Design ID: Z11B
DRAM Die Revision / Process Node: E / 19 nm
Module Manufacturing Date: Undefined
Module Manufacturing Location: Taiwan
Module Serial Number: 00000000h
Module PCB Revision: 00h
PHYSICAL & LOGICAL ATTRIBUTES
Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2133P downbin
Base Module Type: UDIMM (133.35 mm)
Module Capacity: 16 GB
Reference Raw Card: B0 (8 layers)
JEDEC Raw Card Designer: Micron Technology
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 2
Address Mapping from Edge Connector to DRAM: Mirrored
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 16
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Not supported
Soft Post Package Repair: Not supported
DRAM TIMING PARAMETERS
Fine Timebase: 0.001 ns
Medium Timebase: 0.125 ns
CAS Latencies Supported: 7T, 8T, 9T, 10T,
11T, 12T, 13T, 14T,
15T, 16T, 17T, 18T, 19T, 20T, 21T, 22T, 23T, 24T
Minimum Clock Cycle Time (tCK min): 0.938 ns (1066.10 MHz)
Maximum Clock Cycle Time (tCK max): 1.500 ns (666.67 MHz)
CAS# Latency Time (tAA min): 13.500 ns
RAS# to CAS# Delay Time (tRCD min): 13.500 ns
Row Precharge Delay Time (tRP min): 13.500 ns
Active to Precharge Delay Time (tRAS min): 33.000 ns
Act to Act/Refresh Delay Time (tRC min): 46.500 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350.000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260.000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160.000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3.700 ns
Long Row Active to Row Active Delay (tRRD_L min): 5.300 ns
Long CAS to CAS Delay Time (tCCD_L min): 5.356 ns
Four Active Windows Delay (tFAW min): 21.000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1.20 V operable/endurant: Yes/Yes
THERMAL PARAMETERS
Module Thermal Sensor: Incorporated
INTEGRATED TEMPERATURE SENSOR
Manufacturer: ABLIC Inc.
Model: S-34TS04A
Revision: 21h
Temperature Monitor Status: Active
Current Ambient Temperature: 32.000 °C
Sensor Resolution: 0.2500 °C (10-bit ADC)
Accuracy over the active range (75 °C to 95 °C): ±1 °C
Accuracy over the monitoring range (40 °C to 125 °C): ±2 °C
Open-drain Event Output: Disabled
10V of VHV on A0 pin: Supported
Negative Temperature Measurements: Supported
Interrupt capabilities: Supported
SPD PROTOCOL
SPD Revision: 1.0
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 491Ch (OK)
SPD Checksum (Bytes 80h-FDh): 27DEh (OK)
PART NUMBER DETAILS
JEDEC DIMM Label: 16GB 2Rx8 PC4-2133P-UB0-10
Frequency CAS RCD RP RAS RC RRDS RRDL CCDL FAW
1067 MHz 24 15 15 36 50 4 6 6 23
1067 MHz 23 15 15 36 50 4 6 6 23
1067 MHz 22 15 15 36 50 4 6 6 23
1067 MHz 21 15 15 36 50 4 6 6 23
1067 MHz 20 15 15 36 50 4 6 6 23
1067 MHz 19 15 15 36 50 4 6 6 23
1067 MHz 18 15 15 36 50 4 6 6 23
1067 MHz 17 15 15 36 50 4 6 6 23
1067 MHz 16 15 15 36 50 4 6 6 23
1067 MHz 15 15 15 36 50 4 6 6 23
933 MHz 14 13 13 31 44 4 5 5 20
933 MHz 13 13 13 31 44 4 5 5 20
800 MHz 12 11 11 27 38 3 5 5 17
800 MHz 11 11 11 27 38 3 5 5 17
667 MHz 10 9 9 22 31 3 4 4 14
667 MHz 9 9 9 22 31 3 4 4 14
667 MHz 8 9 9 22 31 3 4 4 14
667 MHz 7 9 9 22 31 3 4 4 14
INTEL EXTREME MEMORY PROFILES
Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 2 DIMM/channel
XMP PARAMETER PROFILE 1 PROFILE 2
Speed Grade: DDR4-3598 N/A
DRAM Clock Frequency: 1799 MHz N/A
Module VDD Voltage Level: 1.35 V N/A
Minimum DRAM Cycle Time (tCK): 0.556 ns N/A
CAS Latencies Supported: 24T,23T,22T,21T,
20T,19T,18T,17T,
16T,15T,14T,13T,
12T,11T,10T,9T,8T,7T N/A
CAS Latency Time (tAA): 10.008 ns N/A
RAS# to CAS# Delay Time (tRCD): 10.564 ns N/A
Row Precharge Delay Time (tRP): 10.564 ns N/A
Active to Precharge Delay Time (tRAS): 21.625 ns N/A
Active to Active/Refresh Delay Time (tRC): 32.248 ns N/A
Four Activate Window Delay Time (tFAW): 22.000 ns N/A
Short Activate to Activate Delay Time (tRRD_S): 3.892 ns N/A
Long Activate to Activate Delay Time (tRRD_L): 5.560 ns N/A
Normal Refresh Recovery Delay Time (tRFC1): 350.000 ns N/A
2x mode Refresh Recovery Delay Time (tRFC2): 260.000 ns N/A
4x mode Refresh Recovery Delay Time (tRFC4): 160.000 ns N/A
Show delays in clock cycles